Features: `RoHs Compliant`Lead-Free (Qualified up to 260 Reflow )`Application Specific MOSFETs `Ideal for CPU Core DC-DC Converters `Low Conduction Losses `High Cdv/dt Immunity `Low Profile (<0.7mm) `Dual Sided Cooling Compatible`Compatible with existing Surface Mount Techniques Specifications ...
IRF6622PbF: Features: `RoHs Compliant`Lead-Free (Qualified up to 260 Reflow )`Application Specific MOSFETs `Ideal for CPU Core DC-DC Converters `Low Conduction Losses `High Cdv/dt Immunity `Low Profile (<0.7...
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Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
25 |
V |
VGS | Gate-to-Source Voltage |
±20 | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V |
15 |
A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V |
12 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
59 | |
IDM | Pulsed Drain Current |
120 | |
EAS | Single Pulse Avalanche Energy |
13 |
mJ |
IAR | Avalanche Current |
12 |
A |
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that are critical in synchronous buck converter's ControlFET sockets