IRF6621

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Current - Continuous Drain (Id) @ 25° C: 12A
Series: HEXFET®
Power - Max: 2.2W
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: DirectFET? Isometric SQ
Supplier Device Package: DIRECTFET? SQ
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 12A, 10V
Gate Charge (Qg) @ Vgs: 17.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1460pF @ 15V


Features:

` RoHs Compliant Containing No Lead and Bromide
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching
` Ideal for CPU Core DC-DC Converters
` Optimized for both Sync.FET and some Control FET pplication
` Low Conduction and Switching Losses
` Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	12	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	9.6
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	55
IDM	Pulsed Drain Current	96
EAS	Single Pulse Avalanche Energy	13	mJ
IAR	Avalanche Current	9.6	A

Description

The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve thelowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatibleith existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection solderingtechniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allowsdual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6621 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processorsoperating at higher frequencies. The IRF6621 has been optimized for parameters that are critical in synchronous buck operating from 12 voltbuss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6621
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	9.1 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	1460pF @ 15V
Power - Max	2.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17.5nC @ 4.5V
Package / Case	DirectFET? Isometric SQ
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6621 IRF6621