IRF6620

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 27 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 2.7 m Ohms
Package / Case : Direct-FET MX


Application

Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with Existing Surface MountTechniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20
ID@ TC= 25°C	Continuous Drain Current, VGS @ 10V	150	A
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	27
ID@ TA= 70°C	Continuous Drain Current, VGS @ 10V	22
IDM	Pulsed Drain Current	220
PD@ TA= 25°C	Power Dissipation	2.8	W
PD@ TA= 70°C	Power Dissipation	1.8
PD@ TC= 25°C	Power Dissipation	89
EAS	Single Pulse Avalanche Energy	39	mJ
IAR	Avalanche Current	22	A
	Linear Derating Factor	0.017	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6620 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dualsided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operatingfrom 12 voltbuss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on)and high
Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6620
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds	4130pF @ 10V
Power - Max	2.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	42nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6620 IRF6620 IRF6620CT ND IRF6620CTND IRF6620CT