IRF6619TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 3 mOhms


Features:

` RoHS Compliant
` Lead-Free (Qualified up to 260°C Reflow)
` Application Specific MOSFETs
` Ideal for CPU Core DC-DC Converters
` Low Conduction Losses
` High Cdv/dt Immunity
` Low Profile (<0.7mm)
` Dual Sided Cooling Compatible
` Compatible with existing Surface Mount Techniques


Specifications

Symbol	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	30	A
ID @ TA=70°C	Continuous Drain Current, VGS @ 10V	24	A
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	150	A
IDM	Pulsed Drain Current	240	A
EAS(Thermally limited)	Single Pulse Avalanche Energy	240	mJ
IAR	Avalanche Current	See Fig. 14, 15, 17a, 17b,	A
EAR	Repetitive Avalanche Energy		mJ

Description

The IRF6619TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The IRF6619TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6619PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.

The IRF6619TRPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619PbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6619TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5040pF @ 10V
Power - Max	2.8W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	57nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6619TRPBF IRF6619TRPBF IRF6619TRPBFDKR ND IRF6619TRPBFDKRND IRF6619TRPBFDKR