IRF6619

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 30 A
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MX
Resistance Drain-Source RDS (on) : 1.65 m Ohms


Features:

` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching above 1MHz
` Ideal for CPU Core DC-DC Converters
` Optimized for Sync. FET socket of Sync. Buck Converter
` Low Conduction Losses
` Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁨	30	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V 􀁨	24
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V (Package Limited)	150
IDM	Pulsed Drain Current 􀁥	240
EAS(Thermally limited)	Single Pulse Avalanche Energy 􀁦	240	mJ
IAR	Avalanche Current 􀁥	See Fig. 14, 15, 17a, 17b,	A
EAR	Repetitive Avalanche Energy 􀁥		mJ

Description

The IRF6619 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve thelowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6619 is compatible withexisting layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dualsided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6619 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switchinglosses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processorsoperating at higher frequencies. The IRF6619 has been optimized for parameters that are critical in synchronous buck operating from 12 voltbuss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6619 offers particularly low Rds(on) and highCdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6619
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5040pF @ 10V
Power - Max	2.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	57nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6619 IRF6619 IRF6619CT ND IRF6619CTND IRF6619CT