IRF6618TR1

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 2.2 m Ohms
Continuous Drain Current : 29 A
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MT


Features:

· Application Specific MOSFETs
· Ideal for CPU Core DC-DC Converters
· Low Conduction Losses
· Low Switching Losses
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	170	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	30
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	24
IDM	Pulsed Drain Current	240
PD @TA = 25°C	Power Dissipation	2.8	W
PD @TA = 70°C	Power Dissipation	1.8
PD @TC = 25°C	Power Dissipation	89
	Linear Derating Factor	0.022	W/°C
TJ	Operating Junction and	-40 to + 150	°C
TSTG	Storage Temperature Range	-40 to + 150

Description

The IRF6618TR1 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6618TR1 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/ dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6618TR1
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	5640pF @ 15V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	65nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6618TR1 IRF6618TR1