IRF6616

Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 19 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 5 m Ohms
Package / Case : Direct-FET MX


Features:

`RoHS compliant containing no lead or bormide
`Low Profile (<0.7 mm)
`Dual Sided Cooling Compatible
`Ultra Low Package Inductance
`Optimized for High Frequency Switching
`Low Conduction and Switching Losses
`Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	19	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	15
PD @Tc = 25	Power Dissipation (PCB Mount)	106	W
IDM	Pulsed Drain Current	150
EAS	Single Pulse Avalanche Energy	36	mJ
IAR	Avalanche Current	15

Description

The IRF6616 combines the latest HEXFET^® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6616 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6616 is ideal for secondary side synchronous rectification applications up to 100W, and can also be used in some non-isolated synchronous buck applications where 30V devices do not provide enough voltage headroom.

Parameters:

Technical/Catalog Information	IRF6616
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	5 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	3765pF @ 20V
Power - Max	2.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	44nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6616 IRF6616