MOSFET MOSFT 40V 55A 8.3mOhm 19nC Qg
IRF6614TR1PBF: MOSFET MOSFT 40V 55A 8.3mOhm 19nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 12.7 A | ||
Resistance Drain-Source RDS (on) : | 9.9 mOhms | Packaging : | Reel |
Technical/Catalog Information | IRF6614TR1PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 12.7A |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 12.7A, 10V |
Input Capacitance (Ciss) @ Vds | 2560pF @ 20V |
Power - Max | 2.1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
Package / Case | DirectFET? Isometric ST |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6614TR1PBF IRF6614TR1PBF |