IRF6614

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 12.7 A
Configuration : Single Dual Drain Dual Source
Package / Case : Direct-FET ST
Resistance Drain-Source RDS (on) : 8.3 m Ohms


Features:

` Application Specific MOSFETs
` Lead and Bromide Free
` Low Profile (<0.7 mm)
` Dual Sided Cooling Compatible
` Ultra Low Package Inductance
` Optimized for High Frequency Switching above 1MHz
` Ideal for CPU Core and Telecom Synchronous ectification in DC-DC Converters
` Optimized for Control FET socket of Sync. Buck Converter
` Low Conduction Losses
` Compatible with existing Surface Mount Techniques




Specifications

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	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁨	12.7	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V 􀁨	10.1
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁨	55
IDM	Pulsed Drain Current 􀁥	102
EAS	Single Pulse Avalanche Energy 􀁦	22	mJ
IAR	Avalanche Current 􀁥	10.2	A

Description

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achievethe lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package iscompatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red orconvection soldering techniques, when application note IRF6614 is followed regarding the manufacturing methods and processes.The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermalresistance by 80%.

The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction andswitching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generationof processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronousbuck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.