MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 23 A | ||
Resistance Drain-Source RDS (on) : | 3.4 m Ohms | Configuration : | Single Quad Drain Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | Direct-FET MT | Packaging : | Reel |
Technical/Catalog Information | IRF6613TR1 |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 23A |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 23A, 10V |
Input Capacitance (Ciss) @ Vds | 5950pF @ 15V |
Power - Max | 2.8W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 63nC @ 4.5V |
Package / Case | DirectFET? Isometric MT |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF6613TR1 IRF6613TR1 IRF6613TR1CT ND IRF6613TR1CTND IRF6613TR1CT |