IRF6613

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 23 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 3.4 m Ohms
Package / Case : Direct-FET MT


Application

Application Specific MOSFETs
Ideal for Synchronous Rectification in Isolated DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20
ID @ TC= 25°C	Continuous Drain Current, VGS @ 10V	150	A
ID @ TA= 25°C	Continuous Drain Current, VGS @ 10V	23
ID @ TA= 70°C	Continuous Drain Current, VGS @ 10V	18
IDM	Pulsed Drain Current	180
PD @ TC= 25°C	Power Dissipation	89	W mJ
PD @ TA= 25°C	Power Dissipation	2.8
PD @ TA= 70°C	Power Dissipation	1.8
EAS	Single Pulse Avalanche Energy	200
IAR	Avalanche Current	18	A
	Linear Derating Factor	0.022	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6613 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunityfor synchro-nous FET applications.