IRF6611

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 27 A
Configuration : Single Quad Drain Dual Source
Resistance Drain-Source RDS (on) : 2.6 m Ohms
Package / Case : Direct-FET MX


Features:

􀁺` Low Profile (<0.7 mm)
􀁺` Dual Sided Cooling Compatible 􀁣
􀁺` Ultra Low Package Inductance
􀁺` Optimized for High Frequency Switching above 1MHz 􀁣
􀁺` Ideal for CPU Core DC-DC Converters
􀁺` Optimized for SyncFET Socket of Sync. Buck Converter􀁣
􀁺` Low Conduction Losses
􀁺` Compatible with Existing Surface Mount Techniques 􀁣




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁨	27	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V 􀁨	22
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V 􀁨	150
IDM	Pulsed Drain Current 􀁥	220
EAS	Single Pulse Avalanche Energy 􀁦	210	mJ
IAR	Avalanche Current 􀁥	22	A

Description

The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest n-state resistance in a packag that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6611 is compatible with existing ayout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, en application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided ooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching osses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors perating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt us converters including R_DS(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6611 offers particularly low R_DS(on) and high Cdv/ t immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6611
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	2.6 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds	4860pF @ 15V
Power - Max	3.9W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	56nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6611 IRF6611 IRF6611CT ND IRF6611CTND IRF6611CT