MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 15 A | ||
Resistance Drain-Source RDS (on) : | 10.7 mOhms | Packaging : | Reel |
Technical/Catalog Information | IRF6610TRPBF |
Vendor | International Rectifier (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 6.8 mOhm @ 15A, 10V |
Input Capacitance (Ciss) @ Vds | 1520pF @ 10V |
Power - Max | 2.2W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 17nC @ 4.5V |
Package / Case | DirectFET? Isometric SQ |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6610TRPBF IRF6610TRPBF IRF6610TRPBFCT ND IRF6610TRPBFCTND IRF6610TRPBFCT |