IRF6610

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
Drain to Source Voltage (Vdss): 20V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 15A
Power - Max: 2.2W
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: DirectFET? Isometric SQ
Supplier Device Package: DIRECTFET? SQ
Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 1520pF @ 10V


Features:

Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FETapplication
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques

Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±20
ID @ TA= 25°C	Continuous Drain Current, VGS @ 10V	15	A
ID @ TA= 70°C	Continuous Drain Current, VGS @ 10V	12
ID @ TC= 25°C	Continuous Drain Current, VGS @ 10V	66
IDM	Pulsed Drain Current	120
EAS	Single Pulse Avalanche Energy	13	mJ
IAR	Avalanche Current	12	A

Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package of the IRF6610 allowsdual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6610 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6610 has been optimized for parameters that are critical in synchronous buck operating from 12 voltbuss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6610
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	6.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1520pF @ 10V
Power - Max	2.2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	DirectFET? Isometric SQ
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6610 IRF6610