IRF6609

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 31 A
Configuration : Single Quad Drain Dual Source
Package / Case : Direct-FET MT
Resistance Drain-Source RDS (on) : 2.6 m Ohms


Features:

· Low Conduction Losses
· Low Switching Losses
· Ideal Synchronous Rectifier MOSFET
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Compatible with existing Surface Mount
Techniques




Specifications

	Parameter	Max.	Unit
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	150	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	31
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	25
IDM	Pulsed Drain Current	250
PD @TA = 25°C	Power Dissipation	2.8	W
PD @TA = 70°C	Power Dissipation	1.8
PD @TC = 25°C	Power Dissipation	89
	Linear Derating Factor	0.022	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6609 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6609 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6609 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6609 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6609 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6609
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	2 mOhm @ 31A, 10V
Input Capacitance (Ciss) @ Vds	6290pF @ 10V
Power - Max	1.8W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	69nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6609 IRF6609 IRF6609CT ND IRF6609CTND IRF6609CT