IRF6608

Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 11 mOhms
Continuous Drain Current : 11.8 A
Package / Case : Direct-FET ST


Application

Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±12
ID@ TC= 25°C	Continuous Drain Current, VGS @ 10V	55	A
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	13
ID@ TA= 70°C	Continuous Drain Current, VGS @ 10V	10
IDM	Pulsed Drain Current	200
PD@ TA= 25°C	Power Dissipation	2.1	W
PD@ TA= 70°C	Power Dissipation	1.4
PD@ TC= 25°C	Power Dissipation	42
	Linear Derating Factor	0.017	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6608 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package of the IRF6608 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6608
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	9 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	2120pF @ 15V
Power - Max	2.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	24nC @ 4.5V
Package / Case	DirectFET? Isometric ST
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6608 IRF6608 IRF6608CT ND IRF6608CTND IRF6608CT