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IRF6607TR1

MOSFET

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SeekIC No. : 00158722 Detail

IRF6607TR1: MOSFET

IRF6607TR1 Data Sheet

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Part Number:
IRF6607TR1
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~780
  • 780~1000
  • Unit Price
  • $1
  • $1
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 3.3 mOhms Configuration : Single
Package / Case : Direct-FET MT Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style :
Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 3.3 mOhms
Continuous Drain Current : 27 A
Package / Case : Direct-FET MT


Parameters:

Technical/Catalog InformationIRF6607TR1
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C27A
Rds On (Max) @ Id, Vgs3.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6930pF @ 15V
Power - Max3.6W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs75nC @ 4.5V
Package / CaseDirectFET? Isometric MT
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF6607TR1
IRF6607TR1



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