IRF6607

Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 27 A
Resistance Drain-Source RDS (on) : 4.4 mOhms
Package / Case : DirectFET MT Isometric


Features:

· Application Specific MOSFETs
· Ideal for CPU Core DC-DC Converters
· Low Conduction Losses
· High Cdv/dt Immunity
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Compatible with existing Surface
Mount Techniques




Specifications

	Parameter	Max.	Unit
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±12
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	94	A
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	27
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	22
IDM	Pulsed Drain Current	220
PD @TA = 25°C	Power Dissipation	3.6	W
PD @TA = 70°C	Power Dissipation	2.3
PD @TC = 25°C	Power Dissipation	42
	Linear Derating Factor	0.029	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6607 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6607 is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications

Parameters:

Technical/Catalog Information	IRF6607
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6930pF @ 15V
Power - Max	3.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	75nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6607 IRF6607 IRF6607CT ND IRF6607CTND IRF6607CT