IRF6604TR1

Maximum Operating Temperature :
Mounting Style :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 12 A
Gate-Source Breakdown Voltage : +/- 12 V
Resistance Drain-Source RDS (on) : 11.5 mOhms
Configuration : Single Dual Drain Dual Source
Package / Case : Direct-FET MQ


Parameters:

Technical/Catalog Information	IRF6604TR1
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	11.5 mOhm @ 12A, 7V
Input Capacitance (Ciss) @ Vds	2270pF @ 15V
Power - Max	2.3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	26nC @ 4.5V
Package / Case	DirectFET? Isometric MQ
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6604TR1 IRF6604TR1