IRF6604

Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 13 mOhms
Configuration : Single Dual Drain Dual Source
Package / Case : Direct-FET MQ


Features:

· Application Specific MOSFETs
· Ideal for CPU Core DC-DC Converters
· Low Conduction Losses
· Low Switching Losses
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Compatible with existing Surface Mount echniques




Specifications

	Parameter	Max	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±12	A
ID @ TC =25	Continuous Drain Current, VGS @ 7.0	49
ID @ TC =25	Continuous Drain Current, VGS @ 7.0	12
ID @ TC =70	Continuous Drain Current, VGS @ 7.0	9.2
IDM	Pulsed Drain Current􀀀	92
PD @TA = 25	Power Dissipation	2.3	W/
PD @TA = 70	Power Dissipation	1.5
PD @TA = 25	Power Dissipation	42
	Linear Derating Factor	0.018
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150

Description

The IRF6604 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packagingto achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mmprofile. The DirectFET package of the IRF6604 is compatible with existing layout geometries used in power applications, PCB assemblyequipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided coolingto maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conductionand switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that powerthe latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters thatare critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6604
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	11.5 mOhm @ 12A, 7V
Input Capacitance (Ciss) @ Vds	2270pF @ 15V
Power - Max	2.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	26nC @ 4.5V
Package / Case	DirectFET? Isometric MQ
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6604 IRF6604 IRF6604CT ND IRF6604CTND IRF6604CT