IRF6602

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.3W
Gate Charge (Qg) @ Vgs: 18nC @ 4.5V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Package / Case: DirectFET? Isometric MQ
Supplier Device Package: DIRECTFET? MQ
Rds On (Max) @ Id, Vgs: 13 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds: 1420pF @ 10V


Features:

· Application Specific MOSFETs
· Ideal for CPU Core DC-DC Converters
· Low Conduction Losses
· Low Switching Losses
· Low Profile (<0.7 mm)
· Dual Sided Cooling Compatible
· Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Unit
VDS	Drain-to-Source Voltage	20	V
VGS	Gate-to-Source Voltage	±12
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	48
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	11	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	8.9
IDM	Pulsed Drain Current	89
PD @TA = 25°C	Power Dissipation	2.3	W
PD @TA = 70°C	Power Dissipation	1.5
PD @TC = 25°C	Power Dissipation	42
	Linear Derating Factor	0.018	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packaging to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package of the IRF6602 allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Parameters:

Technical/Catalog Information	IRF6602
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	13 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1420pF @ 10V
Power - Max	2.3W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	18nC @ 4.5V
Package / Case	DirectFET? Isometric MQ
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6602 IRF6602 IRF6602CT ND IRF6602CTND IRF6602CT