IRF6601

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Series: HEXFET®
Power - Max: 3.6W
Current - Continuous Drain (Id) @ 25° C: 26A
Packaging: Cut Tape (CT)
Manufacturer: International Rectifier
Gate Charge (Qg) @ Vgs: 45nC @ 4.5V
Package / Case: DirectFET? Isometric MT
Supplier Device Package: DIRECTFET? MT
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds: 3440pF @ 15V


Features:

 · Application Specific MOSFETs
 · Ideal for CPU Core DC-DC Converters
 · Low Conduction Losses
 · Low Switching Losses
 · Low Profile (<0.7 mm)
 · Dual Sided Cooling Compatible
 · Compatible with exisiting Surface Mount echniques


Specifications

	Parameter	Max	Units
VDS	Drain-to-Source Voltage	20	V
ID @ TC =25°C	Continuous Drain Current, VGS @ 10 V	85
ID @ TC =25°C	Continuous Drain Current, VGS @ 10 V	26
ID @ TC =70°C	Continuous Drain Current, VGS @ 10 V	20
IDM	Pulsed Drain Current 􀀀	200
PD @TA = 25°C	Power Dissipation	3.6	W/
PD @TA = 70°C	Power Dissipation	2.3
PD @TA = 25°C	Power Dissipation	42
	Linear Derating Factor	28
VGS	Gate-to-Source Voltage	±20	A
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

he IRF6601 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TM packagingto achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFETpackage is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,infra-red or convection soldering techniques. The IRF6601 package allows dual sided cooling to maximize thermal transfer n power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6601 balances both low resistance and low charge along with ultra low package inductance to reduce both conductionand switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power thelatest generation of processors operating at higher frequencies. The IRF6601 has been optimized for parameters that arecritical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6601offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6601
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	26A
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	3440pF @ 15V
Power - Max	3.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	45nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6601 IRF6601 IRF6601CT ND IRF6601CTND IRF6601CT