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IRF654B

Features: • 21A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications PARAMETER SYMBOL IRF654B IRFS654B UNIT Drain-Source Voltage...

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IRF654B: Features: • 21A, 250V, RDS(on) = 0.14 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 60 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRF654B Data Sheet

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Part Number:
IRF654B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

• 21A, 250V, RDS(on) = 0.14 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

PARAMETER SYMBOL IRF654B IRFS654B UNIT
Drain-Source Voltage VDSS 250 V
Drain Current - Continuous (TC = 25)
- Continuous (TC = 100)		 ID 21 21* A
13.3 13.3*
Drain Current - Pulsed (Note 1) IDM 84 84* A
Gate-Source Voltage VGSS ± 30 V
Avalanche Current (Note 1) IAR 21 A
Single Pulsed Avalanche Energy (Note 2) EAS 700 mJ
Repetitive Avalanche Energy (Note 1) EAR 15.6 mJ
Power Dissipation (TC = 25)
- Derate above 25		 PD 156 50 W
1.25 0.4 W/
Peak Diode Recovery dv/dt (Note 3) dv/dt 5.5 V/ns
Operating and Storage Temperature Range TJ, TSTG -55 to +150
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 TL 300
* Drain current limited by maximum junction temperature.


Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRF654B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




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