Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` Low RDS(ON) : 0.108 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-t...
IRF654A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` ...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 250 | V |
ID | Continuous Drain Current (TC=25) Continuous Drain Current (TC=100) |
21 13.3 |
A |
IDM VGS EAS |
Drain Current-Pulsed(1) Gate-to-Source Voltage Single Pulsed Avalanche Energy(2) |
84 ±30 551 |
A V mJ |
IAR EAR dv/dt |
Avalanche Current(1) Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) |
21 15.6 4.8 |
A mJ V/ns |
PD | Total Power Dissipation (TC=25) Linear Derating Factor |
156 1.25 |
W W/ |
TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |