IRF654A

Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` Low RDS(ON) : 0.108 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-t...

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SeekIC No. : 004376622 Detail

IRF654A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` ...

floor Price/Ceiling Price

Part Number:
IRF654A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/29

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Product Details

Description



Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = 250V
` Low RDS(ON) : 0.108 (Typ.)



Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 250 V
ID Continuous Drain Current (TC=25)
Continuous Drain Current (TC=100)
21
13.3
A
IDM

VGS

EAS
Drain Current-Pulsed(1)

Gate-to-Source Voltage

Single Pulsed Avalanche Energy(2)
84

±30

551
A

V

mJ
IAR

EAR

dv/dt
Avalanche Current(1)

Repetitive Avalanche Energy(1)

Peak Diode Recovery dv/dt(3)
21

15.6

4.8
A

mJ

V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor
156
1.25
W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range
- 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300




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