IRF644S

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:






Specifications






Description

The IRF644S has seven features.The first one is surface mount.The second one is available in tape & reel.The third one is dynamic dv/dt rating.The fourth one is repetitive avalanche rated.The fifth one is fast switching.The sixth one is ease of paralleling.The seventh one is simple drive requirements.

Third generation HEXFETs of the IRF644S from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4.It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.The SMD-220 is suitable for high current applications because of its low internal connection resistance and dissipate up to 2.0W in a typical surface mount application.

The IRF644S has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 14,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 8.5,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 56,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 125,the units is W.When parameter is power dissipation (PCB mount),the symbol is PD@TA=25,the Max. is 3.1,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +150,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .