IRF644NS

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.24 Ohms


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current 	72
PD @TC = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	247	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt †	8.1	V/ns
TJ	Operating Junction and	-55 to +175	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET® Power MOSFETs  IRF644NS from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance persilicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF644NS is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRF644NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.