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IRF644B

Features: • 14A, 250V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF644B IRFS644B Units VDSS Drain to Sour...

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IRF644B: Features: • 14A, 250V, RDS(on) = 0.28 @VGS = 10 V• Low gate charge ( typical 47 nC)• Low Crss ( typical 30 pF)• Fast switching• 100% avalanche tested• Improved dv...

IRF644B Data Sheet

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Part Number:
IRF644B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 14A, 250V, RDS(on) = 0.28 @VGS = 10 V
• Low gate charge ( typical 47 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRF644B IRFS644B Units
VDSS Drain to Source Voltage 250 V
ID Continuous Drain Current(@TC = 25°C) 14 14* A
Continuous Drain Current(@TC = 100°C) 8.9 8.9* A
IDM Drain Current Pulsed (Note 1) 56 56* A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 480 mJ
IAR Avalanche Current (Note 1) 14 A
EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation(@TC = 25 °C) 139 43 W
- Derate above 25°C 1.11 0.35 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300
* Drain current limited by maximum junction temperature.


Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRF644B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.




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