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IRF640T

Features: ·Extremely high dv/dt capability ·Gate charge minimized ·Very low intrinsic capacitancesApplicationSwitching applicationSpecifications Symbol Parameter Value Unit VDSVGSIDID IDM(1)PTOT dv/dt(2) Drain-source voltage (VGS= 0) Gate-source voltageDrain current (contin...

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SeekIC No. : 004376616 Detail

IRF640T: Features: ·Extremely high dv/dt capability ·Gate charge minimized ·Very low intrinsic capacitancesApplicationSwitching applicationSpecifications Symbol Parameter Value Unit VDSV...

IRF640T Data Sheet

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Part Number:
IRF640T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/18

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Product Details

Description



Features:

·Extremely high dv/dt capability
·Gate charge minimized
·Very low intrinsic capacitances


Application

Switching application


Specifications

Symbol
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM(1)
PTOT

dv/dt(2)
Drain-source voltage (VGS= 0)
Gate-source voltage
Drain current (continuous) at TC= 25
Drain current (continuous) at TC=100
Drain current (pulsed)
Total dissipation at TC= 25
Derating factor
Peak diode recovery voltage slope
200
±20
15
10
60
90
0.72
15
V
V
A
A
A
W
W/
V/ns
TJ,Tstg
Operating junction temperature
Storage temperature
-55 to 150

1.Pulse width limited by safe operating area
2. ISD15A, di/dt300A/S, VDD =80%V(BR)DSS


Description

This Power MOSFET of the IRF640T is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.


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