IRF640S

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.18 Ohms


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.150
` EXTREMELY HIGH dv/dt CAPABILITY
` VERY LOW INTRINSIC CAPACITANCES
` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

Specifications

Symbol	Parameter	Value	Uni t
VDS	Drain-source Voltage (VGS = 0)	200	V
VDGR	Drain- gate Voltage (RGS = 20 k)	200	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25 °C	18	A
ID	Drain Current (continuous) at Tc = 100 °C	11	A
IDM(`)	Drain Current (pulsed)	72	A
Ptot	Total Dissipation at Tc = 25 oC	125	W
	Derating Factor	1.0	W/°C
dv/dt(1)	Peak Diode Recovery voltage slope	5	V/ns
Tstg	Storage Temperature	-65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

(•) Pulse width limited by safe operating area             ( 1) I_SD 18A, di/dt 300 A/ms, V_DD V_(BR)DSS, Tj T_JMAX

Description

This power MOSFET of the IRF640S is designed using he company's consolidated strip layout-based MESH OVERLAY^TM process. This technology matches and improves the performances compared with standard parts from various sources.