IRF640PBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.18 Ohms


Description

The IRF640PBF is designed as one kind of HEXFET power MOSFET device that has some points of features such as (1)dynamic dv/dt rating;(2)repetitive avalanche rated;(3)fast switching;(4)ease of paralleling;(5)simple drive requirements. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

The absolute maximum ratings of the IRF640PBF can be summarized as:(1)continuous drain current, VGS @ 10 V Tc = 25 : 18 A;(2)continuous drain current, VGS @ 10 V Tc = 100 : 11 A;(3)pulsed drain current: 72 A;(4)linear derating factor: 1.0 W/;(5)gate-to-source voltage of the IRF640PBF: +/- 20 V;(6)single pulse avalanche energy: 580 mJ;(7)avalanche current: 18 A;(8)repetitive avalanche energy: 13 mJ;(9)peak diode recovery dv/dt: 5.0 V/ns;(10)operating junction and storage temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.