IRF640NPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 150 mOhms


Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive Requirements
· Lead-Free




Specifications

Symbol	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID TC =100°C	Continuous Drain Current, VGS @ 10V	13	A
IDM	Pulsed Drain Current	72	A
PD @ TC = 25	Maximum Power Dissipation	150	W
	Linear Derating Factor	1.0	W
VGS	Gate-to-Source Voltage	±2	W/
EAS	Single Pulse Avalanche Energy	247	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery	8.1	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting torque, 6-32 or M3 screw	10lb in (1.1N m)

Description

The IRF640NPbF is one of the IRF640N series.Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for low-profile application.

Features of the The TO-220 package IRF640NPbF are:(1)Advanced Process Technology;(2)Dynamic dv/dt Rating;(3)175°C Operating Temperature;(4)Fast Switching;(5)Fully Avalanche Rated;(6)Ease of Paralleling;(7)Simple Drive Requirements.

The absolute maximum ratings IRF640NPbF of The TO-220 package can be summarized as:(1)Continuous Drain Current, VGS @ 10V:18A;(2)Continuous Drain Current, VGS @ 10V:13A;(3)Pulsed Drain Current:72A;(4)Power Dissipation:150w;(5)Linear Derating Factor:1.0W/°C;(6)Gate-to-Source Voltage:± 20V;(7)Single Pulse Avalanche Energy:247mJ;(8)Avalanche Current18A:;(9)Repetitive Avalanche Energy:15mJ;(10)Peak Diode Recovery dv/dt:8.1V/ns(11)Operating Junction andStorage Temperature Range:-55°C to +175°C;(12)Soldering Temperature, for 10 seconds:300 °C(1.6mm from case );(13)Mounting torque, 6-32 or M3 srew:10 lbf•in (1.1N•m).

Parameters:

Technical/Catalog Information	IRF640NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	150 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1160pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	67nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF640NPBF IRF640NPBF