IRF640N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 67nC @ 10V
Power - Max: 150W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 150 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds: 1160pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	18	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	13
IDM	Pulsed Drain Current 	72
PD @TC = 25°C	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/°C
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy‚	247	mJ
IAR	Avalanche Current	18	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt †	8.1	V/ns
TJ	Operating Junction and	-55 to +175	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew„	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET® Power MOSFETs IRF640N from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF640N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.