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IRF640FP

MOSFET N-Ch 200 Volt 18 Amp

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SeekIC No. : 00160825 Detail

IRF640FP: MOSFET N-Ch 200 Volt 18 Amp

IRF640FP Data Sheet

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Part Number:
IRF640FP
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
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Upload time: 2024/11/6

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220FP
Resistance Drain-Source RDS (on) : 0.18 Ohms


Features:

 ` TYPICAL RDS(on) = 0.150
 `  EXTREMELY HIGH dV/dt CAPABILITY
 `  VERY LOW INTRINSIC CAPACITANCES
 `  GATE CHARGE MINIMIZED


Application

 ·  HIGH CURRENT SWITCHING
 ·  UNINTERRUPTIBLE POWER SUPPLY (UPS)
 ·  DC/DC COVERTERS FOR TELECOM,
      INDUSTRIAL, AND LIGHTING EQUIPMENT.


Specifications

Symbol Parameter
Value
Unit
IRF640
IRF640FP
VDS Drain-source Voltage (VGS = 0)
200
V
VDGR Drain- gate Voltage (RGS = 20 k)
200
V
VGS Gate-source Voltage
± 20
V
ID Drain Current (continuous) at Tc = 25
18
18(**)
A
ID Drain Current (continuous) at Tc = 100
11
11(**)
A
IDM(•) Drain Current (pulsed)
72
72
A
Ptot Total Dissipation at Tc = 25
125
40
W
  Derating Factor
1.0
0.32
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
5
5
V/ns
VISO Peak Diode Recovery voltage slope
-
2000
V
Tstg Storage Temperature
-65 to 150
Tj Max. Operating Junction Temperature
150

(•) Pulse width limited by safe operating area     ( 1) ISD 18A, di/dt300 A/ms, VDDV(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed


Description

This power MOSFET of the IRF640FP is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationIRF640FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs180 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 1560pF @ 25V
Power - Max40W
PackagingTube
Gate Charge (Qg) @ Vgs72nC @ 10V
Package / CaseTO-220-3 Full Pack (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF640FP
IRF640FP



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