Position: Home  > All Categories> Integrated Circuits (ICs) > IRF640B

IRF640B

Features: • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 45 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF640B IRFS640B Units VDSS Drain-...

product image

IRF640B Picture
See larger image
SeekIC No. : 004376612 Detail

IRF640B: Features: • 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 45 nC)• Low Crss ( typical 45 pF)• Fast switching• 100% avalanche tested• Impr...

IRF640B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRF640B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/6

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRF640B IRFS640B Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25°C)
                      - Continuous (TC = 100°C)		   18 * A
  11.4 * A
IDM Drain Current - Pulsed (Note 1)   72 * A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 250 mJ
IAR Avalanche Current (Note 1) 18 A
EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25°C)
                                - Derate above 25°C		 139 43 W
1.11 0.35 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300 °C



Description

These N-Channel enhancement mode power field effect transistors IRF640B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRF640B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Circuit Protection
A50QS75-4Y
F-17*77
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Switches
US32DMRJ
HBGQ22P-11ET
View more