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IRF640A

Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 200V· Lower RDS(ON) : 0.144 (Typ.)Specifications Symbol Parameter Value Units VDSS D...

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SeekIC No. : 004376611 Detail

IRF640A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· Lower Leakage Current : 10 A (Max.) @ VDS = 200V· ...

IRF640A Data Sheet

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Part Number:
IRF640A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/6

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Product Details

Description



Features:

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· Lower Leakage Current : 10 A (Max.) @ VDS = 200V
· Lower RDS(ON) : 0.144 (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
18
11.4
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
72
W/
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
60
mJ
IAR
Avalanche Current
12.5
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dV/dt
Peak Diode Recovery dv/dt
4.4
V/ns
PD
 Total Power Dissipation (TC=25 )
Linear Derating Factor
139
1.11
W
TJ
Operating Junction
-55 to 200
TSTG
Storage Temperature Range
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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