MOSFET N-CH 200V 16A TO-220AB
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Series: | TrenchMOS™ | Manufacturer: | NXP Semiconductors | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 200V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 16A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 8A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 1mA | Gate Charge (Qg) @ Vgs: | 63nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1850pF @ 25V | ||
Power - Max: | 136W | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |