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IRF640,127

MOSFET N-CH 200V 16A TO-220AB

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SeekIC No. : 003432879 Detail

IRF640,127: MOSFET N-CH 200V 16A TO-220AB

IRF640,127 Data Sheet

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Part Number:
IRF640,127
Mfg:
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 16A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 63nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1850pF @ 25V
Power - Max: 136W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Drain to Source Voltage (Vdss): 200V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) @ Vgs: 63nC @ 10V
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Power - Max: 136W
Input Capacitance (Ciss) @ Vds: 1850pF @ 25V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V


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