Features: ` TYPICAL RDS(on) = 0.38` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication` HIGH CURRENT, HIGH SPEED SWITCHING` SWITH MODE POWER SUPPLIES (SMPS)` DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT` IDEAL FOR MONITOR's B+ FUNCTIONSpecifications Symbol ...
IRF634FP: Features: ` TYPICAL RDS(on) = 0.38` EXTREMELY HIGH dv/dt CAPABILITY` 100% AVALANCHE TESTEDApplication` HIGH CURRENT, HIGH SPEED SWITCHING` SWITH MODE POWER SUPPLIES (SMPS)` DC-DC CONVERTERS FOR TELE...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
Value |
Unit | |
IRF634 |
IRF634FP | |||
VDS | Collector-Source Voltage (VGS = 0 V) |
250 |
V | |
VDGR | Drain-gate Voltage (RGS = 20 k) |
250 |
V | |
VGS | Gate-Source Voltage |
±20 |
V | |
ID | Drain Current (continuous) at TC = 25 |
8 |
8(*) |
A |
ID | Drain Current (continuous) at TC = 100 |
5 |
5(*) |
A |
IDM(`) | Drain Current (pulsed) |
32 |
32 |
A |
Ptot | Total Dissipation at TC = 25 |
80 |
30 |
W |
Derating Factor |
0.6 |
0.24 |
W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope |
5
|
V/ns | |
VISO | Insulation Withstand Voltage (DC) |
- |
2000 |
V |
Tstg | Storage Temperature |
-60 to 150 |
||
Tj | Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAY™ process IRF634FP, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company's proprietary edge termination structure, makes it suitable in coverters for lighting applications.