IRF634B_FP001, US $ .35-.7 , Fairchild Semiconductor, IRF634B_FP001 DataSheet download, circuit diagram from SeekIC.com

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IRF634B_FP001: MOSFET 250V Single

IRF634B_FP001 Data Sheet

US $ .35~.7 / Piece | Get Latest Price

Part Number:: IRF634B_FP001
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	8.1 A
Resistance Drain-Source RDS (on) :	0.45 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms

Parameters:

Technical/Catalog Information	IRF634B_FP001
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	8.1A
Rds On (Max) @ Id, Vgs	450 mOhm @ 4.05A, 10V
Input Capacitance (Ciss) @ Vds	1000pF @ 25V
Power - Max	74W
Packaging	Tube
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF634B_FP001 IRF634B_FP001

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IRF634B_FP001

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