Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance`Improved Gate Charge` Extended Safe Operating Area`Lower Leakage Current: 10A (Max.) @ VDS = 250V`Lower RDS(ON): 0.327 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source ...
IRF634A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance`Improved Gate Charge` Extended Safe Operating Area`Lower Leakage Current: 10A (Max.) @ VDS = 250V`Lower...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
Value |
Units |
VDSS | Drain-Source Voltage |
258 |
V |
ID | Continuous Drain Current (TC=25) |
8.0 |
A |
Continuous Drain Current (TC=100 ) |
5.1 |
A | |
IDM | Drain Current-Pulsed (1) |
32 |
A |
VGSS | Gate-Source Voltage |
±30 |
V |
EAS | Single Pulsed Avalanche Energy (2) |
205 |
mJ |
IAR | Avalanche Current (1) |
8.1 |
A |
EAR | Repetitive Avalanche Energy (1) |
7.4 |
mJ |
dv/dt | Peak Diode Recovery dv/dt (3) |
48 |
V/ns |
PD | Total Power Dissipation (TC=25 ) Linear Derating Factor |
74 0.59 |
W
W/ |
TJ,TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 |
|
TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |