Position: Home  > All Categories> Integrated Circuits (ICs) > IRF630NSTRL

IRF630NSTRL

MOSFET N-CH 200V 9.3A D2PAK

product image

IRF630NSTRL Picture
See larger image
SeekIC No. : 003431785 Detail

IRF630NSTRL: MOSFET N-CH 200V 9.3A D2PAK

IRF630NSTRL Data Sheet

floor Price/Ceiling Price

US $ .76~.79 / Piece | Get Latest Price
Part Number:
IRF630NSTRL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~800
  • 800~1600
  • Unit Price
  • $.79
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/14

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.3A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 35nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 575pF @ 25V
Power - Max: 82W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 9.3A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds: 575pF @ 25V
Power - Max: 82W


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Undefined Category
VI-B63-IU
X27 589
Prototyping Products
AVT4168
DE1
Filters
PICO2205A
PICO2204A
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more