FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: TubeAlternate Packaging
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 9.3A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds: 575pF @ 25V
Power - Max: 82W
Features: · Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive RequirementsSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
9.3 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
6.5 |
| IDM |
Pulsed Drain Current |
37 |
| PD @TC = 25 |
Max. Power Dissipation |
82 |
W |
| |
Linear Derating Factor0 |
0.5 |
W/ |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
94 |
mJ |
| IAR |
Avalanche Current |
9.3 |
A |
| EAR |
Repetitive Avalanche Energy |
8.2 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
8.1 |
V/ns |
| TJ,TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
|
DescriptionFifth Generation HEXFET® Power MOSFETs IRF630NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package IRF630NS is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2Pak IRF630NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF630NS) is available for lowprofile application.
Parameters: | Technical/Catalog Information | IRF630NS |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 9.3A |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 5.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 575pF @ 25V |
| Power - Max | 82W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF630NS
IRF630NS
|
IRF630NS Data Sheet
