IRF630NS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Packaging: TubeAlternate Packaging
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 9.3A
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds: 575pF @ 25V
Power - Max: 82W


Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive Requirements


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	9.3	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	6.5
IDM	Pulsed Drain Current	37
PD @TC = 25	Max. Power Dissipation	82	W
	Linear Derating Factor0	0.5	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	94	mJ
IAR	Avalanche Current	9.3	A
EAR	Repetitive Avalanche Energy	8.2	mJ
dv/dt	Peak Diode Recovery dv/dt	8.1	V/ns
TJ,TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFET^® Power MOSFETs IRF630NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF630NS is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The D²Pak IRF630NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF630NS) is available for lowprofile application.

Parameters:

Technical/Catalog Information	IRF630NS
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9.3A
Rds On (Max) @ Id, Vgs	300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds	575pF @ 25V
Power - Max	82W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF630NS IRF630NS