IRF630NPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 300 mOhms
Continuous Drain Current : 9.3 A


Features:

` Advanced Process Technology
` Dynamic dv/dt Rating
` 175Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Ease of Paralleling
` Simple Drive Requirements
` Lead-Free




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current,VGS @ 10V	9.3	A
ID @ TC = 100	Continuous Drain Current,VGS @ 10V	6.5
IDM	Pulsed Drain Current	37
PD @ TC = 25	Power Dissipation	82	W
	Linear Derating Factor	0.5	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	94	mJ
IAR	Avalanche Current	9.3	A
EAR	Repetitive Avalanche Energy	8.2	mJ
dv/dt	Peak Diode Recovery dv/dt	8.1	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to 175
	Soldering Temperature, for 10 seconds	300(1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf`in (1.1N`m)

Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting T_J = 25, L = 6.5mH R_G = 25, I_AS = 5.4A.
I_SD 5.4A,di/dt280A/µs, V_DDV_(BR)DSS, T_J 175.
This is only applied to TO-220AB package.





Description

Fifth Generation HEXFET^® Power MOSFETs IRF630NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF630NPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The D²Pak IRF630NPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF630NPbF) is available for lowprofile application.

Parameters:

Technical/Catalog Information	IRF630NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9.3A
Rds On (Max) @ Id, Vgs	300 mOhm @ 5.4A, 10V
Input Capacitance (Ciss) @ Vds	575pF @ 25V
Power - Max	82W
Packaging	Tube
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF630NPBF IRF630NPBF