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IRF630FP

MOSFET POWER MOSFET

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SeekIC No. : 00159020 Detail

IRF630FP: MOSFET POWER MOSFET

IRF630FP Data Sheet

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US $ .3~.34 / Piece | Get Latest Price
Part Number:
IRF630FP
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
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  • 1400~2000
  • 2000~5000
  • 5000~10000
  • Unit Price
  • $.34
  • $.33
  • $.32
  • $.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220FP
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

 ` TYPICAL RDS(on) = 0.35
 ` EXTREMELY HIGH dV/dt CAPABILITY
 ` VERY LOW INTRINSIC CAPACITANCES
 ` GATE CHARGE MINIMIZED


Application

· HIGH CURRENT SWITCHING
· UNINTERRUPTIBLE POWER SUPPLY (UPS)
· DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.


Specifications

Symbol Parameter
Value
Unit
IRF630
IRF630FP
VDS Collector-Source Voltage (VGS = 0 V)
200
V
VDGR Drain-gate Voltage (RGS = 20 k)

200
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
9
9(**)
A
ID Drain Current (continuous) at TC = 100
5.7
5.7(**)
A
IDM(`) Drain Current (pulsed)
36
36
A
Ptot Total Dissipation at TC = 25
75
25
W
Derating Factor
0.6
0.20
W/
dv/dt (1) Peak Diode Recovery voltage slope
5
5
 V/ns
VISO Insulation Withstand Voltage (DC)
-
2000
V
Tstg Storage Temperature
-60 to 150
Tj Operating Junction Temperature
150
(•) Pulse width limited by safe operating area
( 1) ISD 9A, di/dt 300 A/ms, VDD V(BR)DSS, Tj TJMAX
First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
(**) Limited only by Maximum Temperature Allowed


Description

This power MOSFET IRF630FP is designed using he company's consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.




Parameters:

Technical/Catalog InformationIRF630FP
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max30W
PackagingTube
Gate Charge (Qg) @ Vgs45nC @ 10V
Package / CaseTO-220FP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF630FP
IRF630FP



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