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IRF630A

Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS(ON) : 0.333 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-Source Vo...

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SeekIC No. : 004376597 Detail

IRF630A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 200V`Low RDS...

IRF630A Data Sheet

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Part Number:
IRF630A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/2

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Product Details

Description



Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`Lower Leakage Current : 10 A (Max.) @ VDS = 200V
`Low RDS(ON) : 0.333 (Typ.)


Specifications

Symbol Parameter
Value
Units
VDSS Drain-Source Voltage
200
V
ID Continuous Drain Current (TC=25)
9
A
Continuous Drain Current (TC=100 )
5.7
A
IDM Drain Current-Pulsed
36
A
VGSS Gate-Source Voltage
±30
V
EAS Single Pulsed Avalanche Energy   
162
mJ
IAR Avalanche Current                 
9
A
EAR Repetitive Avalanche Energy         
7.2
mJ
dv/dt Peak Diode Recovery dv/dt            
50
V/ns
PD Total Power Dissipation (TC=25 )
Linear Derating Factor                   
72
0.57
W
W/
TJ,TSTG Operating Junction and
Storage Temperature Range          
- 55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300



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