IRF630

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Package / Case : TO-220
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 400 mOhms


Features:

• 9A, 200V
• r _DS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"




Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	200	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	200	V
Continuous Drain Current	ID	9	A
TC = 100	ID	6	A
Pulsed Drain Current (Note 3)	IDM	36	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	75	W
Linear Derating Factor		0.6	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	150	mJ
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s.	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel enhancement mode silicon gate power field effect transistors IRF630. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF630.

Parameters:

Technical/Catalog Information	IRF630
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	400 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	700pF @ 25V
Power - Max	75W
Packaging	Tube
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF630 IRF630 497 2757 5 ND 49727575ND 497-2757-5