Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` Low RDS(ON) : 0.742 (Typ.)Specifications Symbol Characteristic Value Units VDSS Drain-t...
IRF624A: Features: ` Avalanche Rugged Technology` Rugged Gate Oxide Technology` Lower Input Capacitance` Improved Gate Charge` Extended Safe Operating Area` Lower Leakage Current : 10 A (Max.) @ VDS = 250V` ...
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Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 250 | V |
ID | Continuous Drain Current (TC=25) | 4.1 | A |
Continuous Drain Current (TC=100) | 2.6 | A | |
IDM | Drain Current-Pulsed (1) | 16 | A |
VGS | Gate-to-Source Voltage | ±30 | V |
EAS | Single Pulsed Avalanche Energy (2) | 84 | mJ |
IAR | Avalanche Current (1) | 4.1 | A |
EAR | Repetitive Avalanche Energy (1) | 4.9 | mJ |
dv/dt | Peak Diode Recovery dv/dt (3) | 4.8 | V/ns |
PD | Total Power Dissipation (TC=25) Linear Derating Factor |
49 0.39 |
W W/ |
TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |