MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 150 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 27 A | ||
Resistance Drain-Source RDS (on) : | 150 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220AB | Packaging : | Tube |
|
Parameter |
Max. |
Units |
VDS |
Drain-to-Source Voltage |
-150 |
V |
VGS |
Gate-to-Source Voltage |
±20 | |
ID@TC = 25 |
Continuous Drain Current, VGS@ 10V |
-27 |
A |
ID@TC=100 |
Continuous Drain Current, VGS@ 10V |
-19 | |
IDM |
Pulsed Drain Current |
-110 | |
PD@TC = 25 |
Maximum Power Dissipation |
250 |
W |
|
Linear Derating Factor |
|
W/ |
dv/dt |
|
8.2 |
V/ns |
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
|
Soldering Temperature, for 10 seconds |
300(1.6mmfromcase) | |
|
Mounting torque, 6-32 or M3 screw |
10 lbf`in (1.1N`m) |
|
Technical/Catalog Information | IRF6218PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 27A |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 16A, 10V |
Input Capacitance (Ciss) @ Vds | 2210pF @ 25V |
Power - Max | 250W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6218PBF IRF6218PBF |