MOSFET P-CH 150V 700MA 8-SOIC
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Parameter |
Max. |
Units | |
ID@TA=25 |
Continuous Drain Current,VGS @ 10V |
-0.7 |
A |
ID@TA=70 |
Continuous Drain Current,VGS @ 10V |
-0.5 | |
IDM | Pulsed Drain Current |
-5.0 | |
PD@TA=25 |
Power Dissipatio |
2.5 |
W |
Linear Derating Factor |
0.02 |
W/ | |
VGS | Gate-to-Source Voltage |
±20 |
V |
dv/dt | Peak Diode Recovery dv/dt |
4.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Technical/Catalog Information | IRF6217PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25° C | 700mA |
Rds On (Max) @ Id, Vgs | 2.4 Ohm @ 420mA, 10V |
Input Capacitance (Ciss) @ Vds | 150pF @ 25V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 9 nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF6217PBF IRF6217PBF |