IRF6215SPBF

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 290 mOhms
Drain-Source Breakdown Voltage : - 150 V
Continuous Drain Current : - 13 A


Description

The IRF6215SPbF is designed as the fifth generation HEXFET from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF6215SPbF has seven features. (1)Lead free. (2)Advanced process technology. (3)Surface mount. (4)175°C operating temperature. (5)Fast switching. (6)P-channel. (7)Fully avalanche rated. That are all the main features.

Some absolute maximum ratings IRF6215SPbF have been concluded as follow. (1)Its continuous drain current Vgs at -10V would be -13A at 25°C and would be -9.0A at 100°C. (2)Its pulsed drain current would be -44A. (3)Its power dissipation would be 3.8W at Ta=25°C and would be 110W at Tc=25°C. (4)Its linear derating factor would be 0.71W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its single pulse avalanche energy would be 310mJ. (7)Its peak diode recovery dv/dt would be -5.0V/ns. (8)Its avalanche current would be -6.6A. (9)Its repetitive avalanche energy would be 11mJ. (10)Its operating junction and storage temperature range would be from -55°C to +175°C. (11)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRF6215SPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min -150V. (2)Its breakdown voltage temperature coefficient would be typ 0.2V/°C. (3)Its static brain to source on-resistance would be max 0.29 and would be max 0.58 at Tj=150°C. (4)Its gate threshold voltage would be min -2.0V and max -4.0V. (5)Its forward transconductance would be min -3.6S. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

Parameters:

Technical/Catalog Information	IRF6215SPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	13A
Rds On (Max) @ Id, Vgs	290 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds	860pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6215SPBF IRF6215SPBF