IRF6215S

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 860pF @ 25V
Supplier Device Package: D2PAK
Gate Charge (Qg) @ Vgs: 66nC @ 10V
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.6A, 10V


Features:

·Advanced Process Technology
·Surface Mount (IRF6215S)
·Low-profile through-hole (IRF6215L)
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	-13	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	-9.0
IDM	Pulsed Drain Current	-44
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	310	mJ
IAR	Avalanche Current	-6.6	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs IRF6215S from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRF6215S is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.

The D²Pak IRF6215S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF6215L) is available for lowprofile applications.